Abstract: At submicron range below 45 nm technology for MOS transistors, leakage power dissipation is a critical concern other than dynamic and short circuit power dissipation. This happens due to the ...
Fraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, Dresden01109, Germany ...
Abstract: Higher integration density and performance optimization are essential parameters in today's IC fabrication technology. As a result, the scaling down of MOS-FET devices to lower nano-meter ...
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