Abstract: A new methodology is presented and allows for the integration of Monte Carlo electron distributions into the Sentaurus workflow for the development of electron detectors applied to ...
Abstract: In this paper we present simulation based radiation damage modeling of 4H silicon carbide (SiC) using the technology computer aided design (TCAD) tools for up to 1 kV forward and backward ...
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This Project consists programs related to the simulations of HEMT(High Electron Mobility Transistor).These codes are written for SILVACO TCAD simulation tool. It mainly concerned about improvement of ...
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