Abstract: This paper presents a novel all-SiC-based four-level active neutral-point-clamped (ANPC) power module utilizing high-performance 1700V/45mΩ and 900V/30mΩ SiC MOSFETs. The module exhibits ...
Abstract: Gallium nitride (GaN) power semiconductors are being explored as promising alternatives for the next generation of high-power traction inverters, suitable for both high- and low-voltage ...
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