The EPC8010 power transistor, sold in die form, measures 1.75 mm 2 with 100 VDS. Optimized for high speed switching, the device has a maximum R DS(on) of 160 mΩ and input gate charge in the hundreds ...
(Application Note) Here is a new Application Note from Nanosurf on conductive AFM (C-AFM) measurements on a polished IC surface with multiple transistor contacts. Chemical-mechanical polishing (CMP) ...
Researchers have found a low-cost way for backscatter radios to support high-throughput communication and 5G-speed Gb/sec data transfer using only a single transistor when previously it required ...
Many DSP chips, microprocessors, FPGAs, and ASICs require multiple power supplies that must deliver different voltages in a specific start-up sequence. Out-of-sequence voltages can cause excessive ...
The discovery of CRISPR technology has revolutionized the fields of transcriptional activation and repression, genome editing, gene-based therapeutics and diagnostics. The applications of this ...
Armed with several semiconductor technologies, NXP is readying for the requirements of 5G infrastructure systems with discrete devices and compact modules. Wireless technology is a large part of ...
Bernin (France), June 3, 2025 – Soitec (Euronext – Tech Leaders), a world leader in the design and production of innovative semiconductor materials, today announced a strategic collaboration with ...
Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.
The promise of 5G Internet of Things (IoT) networks requires more scalable and robust communication systems -- ones that deliver drastically higher data rates and lower power consumption per device.
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